| PART |
Description |
Maker |
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| GN1010 |
GaAs N-Channel MES IC
|
Panasonic
|
| SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
| 3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| SGM2014AM |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| SGM2014M SGM2014 |
From old datasheet system
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
|
Hitachi Semiconductor
NEC
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| 3SK283 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
